RTS amplitudes in decanano n-MOSFETs with conventional and high k gate stacks

Lee, A., Brown, A., Asenov, A. and Roy, S. (2004) RTS amplitudes in decanano n-MOSFETs with conventional and high k gate stacks. In: International workshop on Computational Electronics, IWCE-10, West Lafayette, USA,

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Item Type:Conference Proceedings
Keywords:Channel, Fluctuations, Gate, Monte Carlo Simulation, Monte-Carlo-Simulation, MOSFET, MOSFETS, N-MOSFETS, Propagation, RTS, Simulation, Stacks, Thickness, Transport
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Asenov, Professor Asen and Brown, Mr Andrew and Roy, Professor Scott
Authors: Lee, A., Brown, A., Asenov, A., and Roy, S.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Publisher:IEEE

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