80nm InGaAs MOSFET compared to equivalent Si transistor

Kalna, K., Yang, L., Watling, J. and Asenov, A. (2004) 80nm InGaAs MOSFET compared to equivalent Si transistor. In: 5th European Workshop on Ultimate Integration of Silicon - ULIS04, Leuven, Belgium, pp. 159-162.

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Item Type:Conference Proceedings
Keywords:INGAAS, Integration, MOSFET, Si, Silicon
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Watling, Dr Jeremy and Asenov, Professor Asen and Kalna, Dr Karol
Authors: Kalna, K., Yang, L., Watling, J., and Asenov, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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