Cause and possible cures for delamination of epitaxial structures containing wet thermally oxidised aluminium arsenide (AlAs) during optoelectronic device processing

Hobbs, L., Eddie, I., Erwin, G., Bryce, A., De La Rue, R. , Roberts, J., Krauss, T., McComb, D. and MacKenzie, M. (2004) Cause and possible cures for delamination of epitaxial structures containing wet thermally oxidised aluminium arsenide (AlAs) during optoelectronic device processing. In: Quantum Electronics and Photonics QEP 16, Glasgow,

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Item Type:Conference Proceedings
Keywords:Alas, Device, Interferometers, Quantum
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:De La Rue, Professor Richard and Bryce, Prof Ann
Authors: Hobbs, L., Eddie, I., Erwin, G., Bryce, A., De La Rue, R., Roberts, J., Krauss, T., McComb, D., and MacKenzie, M.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Publisher:Institute of Physics

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