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Integration of a novel, high quality Si3N4 metal insulator metal (MIM) capacitors deposited by (ICP-CVD) at room temperature with 50nm T-gate metamorphic HEMTS to realise monolithic millimetre-wave integrated circuits (MMMICs)

Elgaid, K., McLelland, H., Cao, X. and Thayne, I. (2004) Integration of a novel, high quality Si3N4 metal insulator metal (MIM) capacitors deposited by (ICP-CVD) at room temperature with 50nm T-gate metamorphic HEMTS to realise monolithic millimetre-wave integrated circuits (MMMICs). In: 16th International Conference on Indium phosphide and Related Materials, Kagoshima, Japan,

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Item Type:Conference Proceedings
Keywords:Circuits, HEMT, HEMTS, Insulator, Integration, Millimetre Wave
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Thayne, Prof Iain and McLelland, Mrs Helen and Elgaid, Dr Khaled
Authors: Elgaid, K., McLelland, H., Cao, X., and Thayne, I.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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