Impact of intrinsic parameter fluctuations in decanano MOSFETs on yield and functionality of SRAM cells

Cheng, B., Roy, S. and Adamu-Lema, F. (2004) Impact of intrinsic parameter fluctuations in decanano MOSFETs on yield and functionality of SRAM cells. In: 5th European Workshop on Ultimate Integration of Silicon - ULIS04, Leuven, Belgium, pp. 23-26.

Cheng, B., Roy, S. and Adamu-Lema, F. (2004) Impact of intrinsic parameter fluctuations in decanano MOSFETs on yield and functionality of SRAM cells. In: 5th European Workshop on Ultimate Integration of Silicon - ULIS04, Leuven, Belgium, pp. 23-26.

Full text not currently available from Enlighten.


Item Type:Conference Proceedings
Keywords:Atomistic, Cells, Decanano MOSFETS, Fluctuation, Fluctuations, Impact, Integration, Intrinsic Parameter Fluctuation, Intrinsic Parameter Fluctuations, MOSFET, MOSFETS, Parameter Fluctuations, Silicon, Simulation, SRAM
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Cheng, Dr Binjie and Roy, Professor Scott
Authors: Cheng, B., Roy, S., and Adamu-Lema, F.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

University Staff: Request a correction | Enlighten Editors: Update this record