Cheng, B., Roy, S. and Asenov, A. (2004) The impact of random dopant effects on SRAM cells. In: 30th European Solid-State Circuits Confernece ESSCIRC 2004, Leuven, Belgium, pp. 219-222.
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Item Type: | Conference Proceedings |
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Keywords: | Cells, Circuits, Impact, Random Dopant, SRAM |
Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Asenov, Professor Asen and Cheng, Dr Binjie and Roy, Professor Scott |
Authors: | Cheng, B., Roy, S., and Asenov, A. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
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