The impact of random dopant effects on SRAM cells

Cheng, B., Roy, S. and Asenov, A. (2004) The impact of random dopant effects on SRAM cells. In: 30th European Solid-State Circuits Confernece ESSCIRC 2004, Leuven, Belgium, pp. 219-222.

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Item Type:Conference Proceedings
Keywords:Cells, Circuits, Impact, Random Dopant, SRAM
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Cheng, Dr Binjie and Roy, Professor Scott and Asenov, Professor Asen
Authors: Cheng, B., Roy, S., and Asenov, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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