High performance 50nm T-gate In0.52Al0.48As/In0.7Ga0.3As psuedomorphic high electron mobility transistors

Cao, X., Elgaid, K., McLelland, H., Stanley, C. and Thayne, I. (2004) High performance 50nm T-gate In0.52Al0.48As/In0.7Ga0.3As psuedomorphic high electron mobility transistors. In: 16th International Conference on Indium phosphide and Related Materials, Kagoshima, Japan,

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Item Type:Conference Proceedings
Keywords:Electron, Electron-Mobility, High Electron Mobility Transistor, High Performance, High-Performance, Mobility, Performance, Transistors
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Thayne, Professor Iain and McLelland, Mrs Helen and Stanley, Professor Colin and Elgaid, Dr Khaled
Authors: Cao, X., Elgaid, K., McLelland, H., Stanley, C., and Thayne, I.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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