High yield, high uniformity, high performance 50nm T-gate In0.52Al0.48As/In0.7Ga0.3As

Cao, X., Thoms, S., Stanley, C. and Thayne, I. (2004) High yield, high uniformity, high performance 50nm T-gate In0.52Al0.48As/In0.7Ga0.3As. In: 7th International Conference on Solid State and Intergrated Circuit Technology, Beijing, China,

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Item Type:Conference Proceedings
Keywords:High Performance, High-Performance, Performance, Technology
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Thayne, Professor Iain and Thoms, Dr Stephen and Stanley, Professor Colin
Authors: Cao, X., Thoms, S., Stanley, C., and Thayne, I.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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