Fabrication of very high performance 50nm T-gate metamorphic GaAs HEMT's with exceptional uniformity

Boyd, E., Thoms, S., Moran, D., Elgaid, K., Cao, X., Holland, M., Stanley, C. and Thayne, I. (2004) Fabrication of very high performance 50nm T-gate metamorphic GaAs HEMT's with exceptional uniformity. In: European Gallium Arsenide and other Compound Semiconductors Application Symposium,GaAs 2004, Amsterdam, The Netherlands,

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Item Type:Conference Proceedings
Keywords:Compound Semiconductor, Fabrication, GAAS, HEMT, High Performance, High-Performance, Performance, Semiconductor, Semiconductors
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Thayne, Professor Iain and Thoms, Dr Stephen and Stanley, Professor Colin and Moran, Dr David and Elgaid, Dr Khaled
Authors: Boyd, E., Thoms, S., Moran, D., Elgaid, K., Cao, X., Holland, M., Stanley, C., and Thayne, I.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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