Simulation of scaled sub-100nm strained Si p-channel MOSFETs

Yang, L., Watling, J., Borici, M., Wilkins, R., Asenov, A., Barker, J. and Roy, S. (2003) Simulation of scaled sub-100nm strained Si p-channel MOSFETs. In: International Workshop on Computational Electronics - IWCE 9, Rome, Italy,

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Item Type:Conference Proceedings
Keywords:Model, MOSFET, MOSFETS, Si, Simulation, Strained Si, Strained-Si
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Barker, Professor John and Watling, Dr Jeremy and Roy, Professor Scott and Asenov, Professor Asen
Authors: Yang, L., Watling, J., Borici, M., Wilkins, R., Asenov, A., Barker, J., and Roy, S.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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