Optimisation of sub 11nm Si/SiGe MODFETs for high linearity applications

Yang, L., Asenov, A., Watling, J., Borici, M., Barker, J., Roy, S., Elgaid, K., Thayne, I. and Hackbarth, T. (2003) Optimisation of sub 11nm Si/SiGe MODFETs for high linearity applications. In: 14th Workshop on Modeling and Simulation of Electron Devices, Barcelona, Spain, pp. 41-44.

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Item Type:Conference Proceedings
Keywords:Device, Devices, Electron, Modeling, Optimisation, Simulation
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Thayne, Professor Iain and Barker, Professor John and Watling, Dr Jeremy and Elgaid, Dr Khaled and Roy, Professor Scott and Asenov, Professor Asen
Authors: Yang, L., Asenov, A., Watling, J., Borici, M., Barker, J., Roy, S., Elgaid, K., Thayne, I., and Hackbarth, T.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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