Direct source-to-drain tunneling and its impact on intrinsic parameter fluctuations in nanometre scale double gate MOSFETs

Watling, J., Asenov, A., Brown, A., Svizhenko, A. and Anantram, M. (2003) Direct source-to-drain tunneling and its impact on intrinsic parameter fluctuations in nanometre scale double gate MOSFETs. In: Proceedings Modeling and Simulation of Microsystems 2003 - MSM 03, San Francisco, USA,

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Item Type:Conference Proceedings
Keywords:Double Gate MOSFET, Fluctuation, Fluctuations, Gate, Impact, Intrinsic Parameter Fluctuation, Intrinsic Parameter Fluctuations, Microsystem, Microsystems, Modeling, MOSFET, MOSFETS, Parameter Fluctuations, Scale, Simulation
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Brown, Mr Andrew and Watling, Dr Jeremy and Asenov, Professor Asen
Authors: Watling, J., Asenov, A., Brown, A., Svizhenko, A., and Anantram, M.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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