A methodology for introducing atomistic parameter fluctutations into compact device models for circuit simulation

Roy, S., Cheng, B., Roy, G. and Asenov, A. (2003) A methodology for introducing atomistic parameter fluctutations into compact device models for circuit simulation. In: International Workshop on Computational Electronics - IWCE 9, Rome, Italy,

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Item Type:Conference Proceedings
Keywords:Atomistic, Device, Model, Models, MOSFET, MOSFETS, Simulation
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Roy, Dr Gareth and Cheng, Dr Binjie and Roy, Professor Scott and Asenov, Professor Asen
Authors: Roy, S., Cheng, B., Roy, G., and Asenov, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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