Roy, S., Cheng, B., Roy, G. and Asenov, A. (2003) A methodology for introducing atomistic parameter fluctutations into compact device models for circuit simulation. In: International Workshop on Computational Electronics - IWCE 9, Rome, Italy,
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Item Type: | Conference Proceedings |
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Keywords: | Atomistic, Device, Model, Models, MOSFET, MOSFETS, Simulation |
Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Roy, Dr Gareth and Asenov, Professor Asen and Cheng, Dr Binjie and Roy, Professor Scott |
Authors: | Roy, S., Cheng, B., Roy, G., and Asenov, A. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
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