RTS noise simulations of decanano MOSFETs subject to atomic scale structure variations

Lee, A., Brown, A., Asenov, A. and Roy, S. (2003) RTS noise simulations of decanano MOSFETs subject to atomic scale structure variations. In: NPMS-6/SIMD-4 Sixth International Conference on New Phenomena in Mesoscopic Systems, and Fourth International Conference on Surfaces and Interfaces of Mesoscopic Devices, Maui, Hawaii, Maui, Hawaii,

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Item Type:Conference Proceedings
Keywords:Decanano MOSFETS, Device, Devices, Fluctuation, Fluctuations, Interface, Interfaces, Intrinsic Parameter Fluctuation, Model, MOSFET, MOSFETS, Noise, RTS, Scale, Simulation, Surface, Surfaces, System, Systems
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Asenov, Professor Asen and Brown, Mr Andrew and Roy, Professor Scott
Authors: Lee, A., Brown, A., Asenov, A., and Roy, S.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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