High uniformity highly reproducible non-selective wet gate recess etch process for InP HEMT's

Cao, X. and Thayne, I. (2003) High uniformity highly reproducible non-selective wet gate recess etch process for InP HEMT's. In: GaAs MANTECH, Scottsdale, USA,

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Item Type:Conference Proceedings
Keywords:GAAS, Gate, HEMT, Inp
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Thayne, Professor Iain
Authors: Cao, X., and Thayne, I.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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