High performance 50nm T-gate In0.25AlAs/In0.53GaAs Metamorphic high electron mobility transistors

Cao, X., Thoms, S., Holland, M., Stanley, C. and Thayne, I. (2003) High performance 50nm T-gate In0.25AlAs/In0.53GaAs Metamorphic high electron mobility transistors. In: ESSDERC 2003 - European Solid-State Device Research Conference, Estoril, Portugal,

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Item Type:Conference Proceedings
Keywords:Device, Electron, Electron-Mobility, High Electron Mobility Transistor, High Performance, High-Performance, Mobility, Performance, Transistors
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Thayne, Professor Iain and Thoms, Dr Stephen and Stanley, Professor Colin and Holland, Dr Martin
Authors: Cao, X., Thoms, S., Holland, M., Stanley, C., and Thayne, I.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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