Fabrication and performance of 50nm T-gate for high electron mobility transistors

Cao, X., Thoms, S., Macintyre, D., McLelland, H., Boyd, E., Elgaid, K., Hill, R., Stanley, C. and Thayne, I. (2003) Fabrication and performance of 50nm T-gate for high electron mobility transistors. In: Microelectronic and Nanoelectronic Engineering 2003, Cambridge, UK,

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Item Type:Conference Proceedings
Keywords:Electron, Electron-Mobility, Engineering, Fabrication, High Electron Mobility Transistor, Mobility, Performance, Transistors
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Thayne, Professor Iain and McLelland, Mrs Helen and Thoms, Dr Stephen and Hill, Mr Richard and Stanley, Professor Colin and Elgaid, Dr Khaled and Macintyre, Dr Douglas
Authors: Cao, X., Thoms, S., Macintyre, D., McLelland, H., Boyd, E., Elgaid, K., Hill, R., Stanley, C., and Thayne, I.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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