mm-wave performance of 50nm T-gate AlGaAs/InGaAs pseudomorphic high electron mobility transistors with fT of 200GHz

Cao, X., Boyd, E., McLelland, H., Thoms, S., Stanley, C. and Thayne, I. (2003) mm-wave performance of 50nm T-gate AlGaAs/InGaAs pseudomorphic high electron mobility transistors with fT of 200GHz. In: European Microwave Conference, Munich, Germany,

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Item Type:Conference Proceedings
Keywords:Electron, Electron-Mobility, High Electron Mobility Transistor, Microwave, Mobility, Performance, Transistors
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Thayne, Professor Iain and McLelland, Mrs Helen and Thoms, Dr Stephen and Stanley, Professor Colin
Authors: Cao, X., Boyd, E., McLelland, H., Thoms, S., Stanley, C., and Thayne, I.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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