Interface roughness scattering and its impact on electrons transport in relaxed and strained Si- n-MOSFETs

Borici, M., Watling, J., Wilkins, R. and Barker, J. (2003) Interface roughness scattering and its impact on electrons transport in relaxed and strained Si- n-MOSFETs. In: 13th International Conference on Nonequilibrium Carrier Dynamics - HCIS 13, Modena, Italy,

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Item Type:Conference Proceedings
Keywords:Dynamics, Electron, Electrons, Impact, Interface, Interface Roughness, Interface Roughness Scattering, MOSFET, MOSFETS, N-MOSFETS, Scattering, Si, Simulation, Transport
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Barker, Professor John and Watling, Dr Jeremy
Authors: Borici, M., Watling, J., Wilkins, R., and Barker, J.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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