Statistical 3D simulation of line edge roughness in decanano MOSFETs

Brown, A., Kaya, S., Asenov, A., Davies, J. and Linton, T. (2001) Statistical 3D simulation of line edge roughness in decanano MOSFETs. In: Silicon Nanoelectronics Workshop, Kyoto, Japan, pp. 10-11.

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Item Type:Conference Proceedings
Keywords:Decanano MOSFETS, MOSFET, MOSFETS, Silicon, Simulation
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Brown, Mr Andrew and Asenov, Professor Asen and Davies, Professor John
Authors: Brown, A., Kaya, S., Asenov, A., Davies, J., and Linton, T.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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