Enhanced velocity overshoot and transconductance in Si/SiGe/Si pMOSFETs - predictions for deep submicron devices

Palmer, M. et al. (2001) Enhanced velocity overshoot and transconductance in Si/SiGe/Si pMOSFETs - predictions for deep submicron devices. In: Proceeding ESSDERC 2001 - Edition Frontiers, Nuremberg, Germany, pp. 199-202.

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Item Type:Conference Proceedings
Keywords:Device, Devices, Prediction
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Barker, Professor John and Watling, Dr Jeremy and Asenov, Professor Asen
Authors: Palmer, M., Braithwaite, G., Prest, M., Parker, E., Whall, T., Zhao, S., Kaya, S., Watling, J., Asenov, A., Barker, J., Waite, A., and Evans, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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