Analysis of statistical fluctuations due to line edge roughness in sub-0.1mm MOSFETs

Kaya, S., Brown, A., Asenov, A., Margot, D. and Linton, T. (2001) Analysis of statistical fluctuations due to line edge roughness in sub-0.1mm MOSFETs. In: Simulation of Semiconductor Processes and Devices 2001, pp. 78-81.

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Item Type:Conference Proceedings
Keywords:Device, Devices, Fluctuation, Fluctuations, MOSFET, MOSFETS, Semiconductor, Simulation
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Brown, Mr Andrew and Asenov, Professor Asen
Authors: Kaya, S., Brown, A., Asenov, A., Margot, D., and Linton, T.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Publisher:Springer

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