Scaling study of Si/SiGe MOSFETs for RF applications

Yang, L., Watling, J., Wilkins, R., Asenov, A., Barker, J., Roy, S. and Hackbarth, T. (2002) Scaling study of Si/SiGe MOSFETs for RF applications. In: 10th International Symposium on Electron Devices for Microwave and Optoelectronic Devices ( EDMO 2002), Manchester, UK, pp. 101-106.

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Item Type:Conference Proceedings
Additional Information:IEEE cat no 02TH8629 0-7803-6550-X
Keywords:Device, Devices, Electron, Microwave, MOSFET, MOSFETS, Optoelectronic Devices, Scaling, Si/Sige
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Barker, Professor John and Watling, Dr Jeremy and Roy, Professor Scott and Asenov, Professor Asen
Authors: Yang, L., Watling, J., Wilkins, R., Asenov, A., Barker, J., Roy, S., and Hackbarth, T.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Publisher:IEEE

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