Self-aligned 0.12micron T-gate InGaAs/InAlAs HEMT technology utilizing a non-annealed contact strategy

Moran, D., Kalna, K., Elgaid, K., McEwan, F., McLelland, H., Zhuang, L., Thayne, I., Stanley, C. and Asenov, A. (2003) Self-aligned 0.12micron T-gate InGaAs/InAlAs HEMT technology utilizing a non-annealed contact strategy. In: ESSDERC 2003 - European Solid-State Device Research Conference, Estoril, Portugal, pp. 315-318.

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Item Type:Conference Proceedings
Keywords:Device, HEMT, INP, Non-Annealed, Self-Aligned, Technology
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Thayne, Professor Iain and McLelland, Mrs Helen and Stanley, Professor Colin and Elgaid, Dr Khaled and Asenov, Professor Asen and Kalna, Dr Karol
Authors: Moran, D., Kalna, K., Elgaid, K., McEwan, F., McLelland, H., Zhuang, L., Thayne, I., Stanley, C., and Asenov, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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