Kalna, K. and Asenov, A. (2002) Gate tunnelling and impact ionization in sub 100nm PHEMTs. In: Proceedings of Simulation of Semiconductor Processes and Devices 2002, Kobe, Japan, pp. 139-143.
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| Item Type: | Conference Proceedings |
|---|---|
| Additional Information: | IEEE cat no 02TH8621 |
| Keywords: | Device, Devices, Gate, Impact, PHEMT, PHEMTS, Semiconductor, Simulation |
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Asenov, Professor Asen and Kalna, Dr Karol |
| Authors: | Kalna, K., and Asenov, A. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Publisher: | IEEE |
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