Millimeter-wave performance of In/AlAs/InGaAs HEMT's using a UVIII/PMMA bilayer for 70nm T-gate fabrication

Edgar, D. et al. (2002) Millimeter-wave performance of In/AlAs/InGaAs HEMT's using a UVIII/PMMA bilayer for 70nm T-gate fabrication. In: European Microwave Conference, Milan, Italy,

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Item Type:Conference Proceedings
Keywords:Fabrication, HEMT, Microwave, Performance
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Thayne, Professor Iain and McLelland, Mrs Helen and Thoms, Dr Stephen and Stanley, Professor Colin and Elgaid, Dr Khaled and Macintyre, Dr Douglas
Authors: Edgar, D., Chen, Y., McEwan, F., McLelland, H., Boyd, E., Moran, D., Thoms, S., Macintyre, D., Elgaid, K., Cao, X., Stanley, C., and Thayne, I.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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