120nm gate length e-beam and nanoimprint T-gate GaAs pHEMTs itilising non-annealed ohmic contacts

Boyd, E., Moran, D., McLelland, H., Elgaid, K., Chen, Y., Macintyre, D., Thoms, S., Stanley, C. and Thayne, I. (2002) 120nm gate length e-beam and nanoimprint T-gate GaAs pHEMTs itilising non-annealed ohmic contacts. In: International Symposium on Compound Semiconductors, Lausanne, Switzerland,

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Item Type:Conference Proceedings
Keywords:Compound Semiconductor, Contacts, GAAS, GAAS PHEMT, Gate, Nanoimprint, Non-Annealed, PHEMT, PHEMTS, Semiconductor, Semiconductors
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Thayne, Professor Iain and McLelland, Mrs Helen and Thoms, Dr Stephen and Stanley, Professor Colin and Elgaid, Dr Khaled and Macintyre, Dr Douglas
Authors: Boyd, E., Moran, D., McLelland, H., Elgaid, K., Chen, Y., Macintyre, D., Thoms, S., Stanley, C., and Thayne, I.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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