A 3D parallel simulation of the effect of interface charge fluctuations in HEMTs

Seoane, N., Garcia-Loureiro, A., Kalna, K. and Asenov, A. (2006) A 3D parallel simulation of the effect of interface charge fluctuations in HEMTs. In: 11th International Workshop on Computational Electronics, IWCE 2006, Vienna, Austria, p. 81.

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Item Type:Conference Proceedings
Keywords:Charge, Fluctuation, Fluctuations, HEMT, HEMTS, Impact, Interface, Model, Scattering, Simulation
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Asenov, Professor Asen and Kalna, Dr Karol
Authors: Seoane, N., Garcia-Loureiro, A., Kalna, K., and Asenov, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Publisher:IEEE

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