Seoane, N., Garcia-Loureiro, A., Kalna, K. and Asenov, A. (2006) A 3D parallel simulation of the effect of interface charge fluctuations in HEMTs. In: 11th International Workshop on Computational Electronics, IWCE 2006, Vienna, Austria, p. 81.
Full text not currently available from Enlighten.
Item Type: | Conference Proceedings |
---|---|
Keywords: | Charge, Fluctuation, Fluctuations, HEMT, HEMTS, Impact, Interface, Model, Scattering, Simulation |
Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Asenov, Professor Asen and Kalna, Dr Karol |
Authors: | Seoane, N., Garcia-Loureiro, A., Kalna, K., and Asenov, A. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Publisher: | IEEE |
University Staff: Request a correction | Enlighten Editors: Update this record