Elemental profiling of III-V MOSFET dielectric stacks using scanning transmission electron microscopy with electron energy loss spectroscopy

Scott, J., Longo, P., Holland, M., Stanley, C., Craven, A. and Thayne, I. (2006) Elemental profiling of III-V MOSFET dielectric stacks using scanning transmission electron microscopy with electron energy loss spectroscopy. In: UK III-V Compound Semiconductors 2006, Sheffield, UK,

Full text not currently available from Enlighten.


Item Type:Conference Proceedings
Keywords:Cells, Compound Semiconductor, Dielectric Stacks, Electron, Electron-Microscopy, HEMT, III-V MOSFET, Intermediate Band, Loss, Losses, Microscopy, MOSFET, MOSFETS, Semiconductor, Semiconductors, Solar Cell, Spectroscopy, Stacks, Technology, Transmission
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Thayne, Professor Iain and Stanley, Professor Colin and Holland, Dr Martin
Authors: Scott, J., Longo, P., Holland, M., Stanley, C., Craven, A., and Thayne, I.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Publisher:IOP/EPSRC

University Staff: Request a correction | Enlighten Editors: Update this record