Moran, D., McLelland, H., Elgaid, K., Stanley, C. and Thayne, I. (2006) Scaling of self-aligned T-gate InGaAs/InAlAs HEMT technology. In: UK III-V Compound Semiconductors 2006, Sheffield, UK,
Full text not currently available from Enlighten.
| Item Type: | Conference Proceedings |
|---|---|
| Keywords: | Cells, Compound Semiconductor, HEMT, Intermediate Band, MOSFET, MOSFETS, Scaling, Self-Aligned, Semiconductor, Semiconductors, Solar Cell, Technology |
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Thayne, Prof Iain and McLelland, Mrs Helen and Stanley, Professor Colin and Moran, Professor David and Elgaid, Dr Khaled |
| Authors: | Moran, D., McLelland, H., Elgaid, K., Stanley, C., and Thayne, I. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Publisher: | IOP/EPSRC |
University Staff: Request a correction | Enlighten Editors: Update this record
Deposit and Record Details
Deposit and Record Details