Scaling of self-aligned T-gate InGaAs/InAlAs HEMT technology

Moran, D., McLelland, H., Elgaid, K., Stanley, C. and Thayne, I. (2006) Scaling of self-aligned T-gate InGaAs/InAlAs HEMT technology. In: UK III-V Compound Semiconductors 2006, Sheffield, UK,

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Item Type:Conference Proceedings
Keywords:Cells, Compound Semiconductor, HEMT, Intermediate Band, MOSFET, MOSFETS, Scaling, Self-Aligned, Semiconductor, Semiconductors, Solar Cell, Technology
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Thayne, Professor Iain and McLelland, Mrs Helen and Stanley, Professor Colin and Moran, Dr David and Elgaid, Dr Khaled
Authors: Moran, D., McLelland, H., Elgaid, K., Stanley, C., and Thayne, I.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Publisher:IOP/EPSRC

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