Martinez, A., Barker, J.R., Svizhenko, A., Anantram, A. and Asenov, A. (2006) The impact of random dopant aggregation in source and drain in the performance of ballistic DG nano-MOSFETs. In: IEEE 2006 Silicon Nanoelectronics Workshop, Honolulu, p. 133.
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Item Type: | Conference Proceedings |
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Keywords: | Impact, nano-MOSFETS, performance, random dopant, silicon |
Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Barker, Professor John and Asenov, Professor Asen and Martinez, Dr Antonio |
Authors: | Martinez, A., Barker, J.R., Svizhenko, A., Anantram, A., and Asenov, A. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering College of Science and Engineering > School of Engineering |
Publisher: | IEEE |
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