The impact of random dopant aggregation in source and drain in the performance of ballistic DG nano-MOSFETs

Martinez, A., Barker, J.R., Svizhenko, A., Anantram, A. and Asenov, A. (2006) The impact of random dopant aggregation in source and drain in the performance of ballistic DG nano-MOSFETs. In: IEEE 2006 Silicon Nanoelectronics Workshop, Honolulu, p. 133.

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Item Type:Conference Proceedings
Keywords:Impact, nano-MOSFETS, performance, random dopant, silicon
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Barker, Professor John and Asenov, Professor Asen and Martinez, Dr Antonio
Authors: Martinez, A., Barker, J.R., Svizhenko, A., Anantram, A., and Asenov, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
College of Science and Engineering > School of Engineering
Publisher:IEEE

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
368421Meeting the materials challenges of nano-CMOS electronicsAsen AsenovEngineering & Physical Sciences Research Council (EPSRC)GR/S80097/01Electronic and Nanoscale Engineering