3D statistical simulation of gate leakage fluctutations due to combined interface roughness and random dopants

Markov, S., Brown, A., Cheng, B., Roy, G., Roy, S. and Asenov, A. (2006) 3D statistical simulation of gate leakage fluctutations due to combined interface roughness and random dopants. In: International Conference on Solid State Devices and Materials. (SSDM 2006)., Yokohama,Japan, pp. 362-363.

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Item Type:Conference Proceedings
Keywords:Device, Devices, Gate, Interface, Interface Roughness, Random Dopant, Random Dopants, Simulation
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Markov, Dr Stanislav and Roy, Dr Gareth and Brown, Mr Andrew and Cheng, Dr Binjie and Roy, Professor Scott and Asenov, Professor Asen
Authors: Markov, S., Brown, A., Cheng, B., Roy, G., Roy, S., and Asenov, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Publisher:THE JAPAN SOCIETY OF APPLIED PHYSICS

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