Dry etching of a device quality high-k GaxGdyOz oxide in CH4/H2-O2 chemistry for the fabrication of III-V MOSFETs

Li, X., Zhou, H., Hill, R., Wilkinson, C. and Thayne, I. (2006) Dry etching of a device quality high-k GaxGdyOz oxide in CH4/H2-O2 chemistry for the fabrication of III-V MOSFETs. In: 32nd International Conference on Micro-and Nano-Engineering 2006, Barcelona, Spain,

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Item Type:Conference Proceedings
Keywords:Chemistry, Device, Dry Etching, Fabrication, Gaxgdyoz, High-K, III-V MOSFET, III-V MOSFETS, MOSFET, MOSFETS, Oxide
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Zhou, Dr Haiping and Thayne, Professor Iain and Li, Dr Xiang and Hill, Mr Richard and Wilkinson, Professor Christopher
Authors: Li, X., Zhou, H., Hill, R., Wilkinson, C., and Thayne, I.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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