Li, X. , Zhou, H., Cao, X., Wilkinson, C.D.W. and Thayne, I.G. (2006) Low damage dry etching processes for the fabrication of compound semiconductor based transistors with sub-100nm tungsten gates. In: UK III-V Compound Semiconductors 2006, Sheffield, UK,
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Item Type: | Conference Proceedings |
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Keywords: | Cells, Compound Semiconductor, Damage, Dry Etching, Electron, Electron-Microscopy, Fabrication, GAAS, Gate, Gates, HEMT, Intermediate Band, Losses, Low Damage, MOSFET, MOSFETS, Semiconductor, Semiconductors, Solar Cell, Spectroscopy, System, Systems, Technology, Transistors, Tra |
Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Zhou, Dr Haiping and Thayne, Prof Iain and Wilkinson, Professor Christopher and Li, Dr Xu |
Authors: | Li, X., Zhou, H., Cao, X., Wilkinson, C.D.W., and Thayne, I.G. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Publisher: | IOP/EPSRC |
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