MC simulation of high performance InGaAs nano-MOSFETs for low power CMOS applications

Kalna, K., Wilson, J., Moran, D., Hill, R., Long, A., Droopad, R., Passlack, M., Thayne, I. and Asenov, A. (2006) MC simulation of high performance InGaAs nano-MOSFETs for low power CMOS applications. In: IEEE 2006 Silicon Nanoelectronics Workshop, Honolulu, p. 13.

Full text not currently available from Enlighten.


Item Type:Conference Proceedings
Keywords:CMOS, High Performance, High-Performance, Impact, INGAAS, INGAAS Nano-MOSFETS, Nano-MOSFETS, Performance, Silicon, Simulation
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Thayne, Professor Iain and Hill, Mr Richard and Moran, Dr David and Asenov, Professor Asen and Kalna, Dr Karol
Authors: Kalna, K., Wilson, J., Moran, D., Hill, R., Long, A., Droopad, R., Passlack, M., Thayne, I., and Asenov, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Publisher:IEEE

University Staff: Request a correction | Enlighten Editors: Update this record