Monte Carlo simulation of sub-30 nm high indium implant free III-V MOSFETs for low power digital applications

Kalna, K., Hill, R., Wilson, J., Moran, D., Long, A., Asenov, A. and Thayne, I. (2006) Monte Carlo simulation of sub-30 nm high indium implant free III-V MOSFETs for low power digital applications. In: UK III-V Compound Semiconductors 2006, Sheffield, UK, D-0-3.

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Item Type:Conference Proceedings
Keywords:Compound Semiconductor, III-V MOSFET, III-V MOSFETS, Implant Free, Implant Free III-V MOSFETS, Monte Carlo, Monte Carlo Simulation, Monte-Carlo-Simulation, MOSFET, MOSFETS, Semiconductor, Semiconductors, Simulation
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Thayne, Professor Iain and Hill, Mr Richard and Moran, Dr David and Asenov, Professor Asen and Kalna, Dr Karol
Authors: Kalna, K., Hill, R., Wilson, J., Moran, D., Long, A., Asenov, A., and Thayne, I.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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