GdGaO a gate dielectric for GaAs MOSFETs

Holland, M., Stanley, C., Reid, W., Thayne, I., Paterson, G., Long, A., Longo, P., Scott, J. and Craven, A. (2006) GdGaO a gate dielectric for GaAs MOSFETs. In: UK III-V Compound Semiconductors 2006, Sheffield, UK,

Full text not currently available from Enlighten.


Item Type:Conference Proceedings
Keywords:Cells, Compound Semiconductor, Electron, Electron-Microscopy, GAAS, GAAS MOSFETS, Gate, HEMT, Intermediate Band, Losses, MOSFET, MOSFETS, Semiconductor, Semiconductors, Solar Cell, Spectroscopy, Technology, Transmission
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Thayne, Professor Iain and Stanley, Professor Colin and Holland, Dr Martin
Authors: Holland, M., Stanley, C., Reid, W., Thayne, I., Paterson, G., Long, A., Longo, P., Scott, J., and Craven, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Publisher:IOP/EPSRC

University Staff: Request a correction | Enlighten Editors: Update this record