Ga2O3 grown on GaAs by MBE for GAAs MOSFETs

Holland, M., Stanley, C., Reid, W., Thayne, I., Paterson, G. and Long, A. (2006) Ga2O3 grown on GaAs by MBE for GAAs MOSFETs. In: UK III-V Compound Semiconductors 2006, Sheffield, UK,

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Item Type:Conference Proceedings
Keywords:Cells, Compound Semiconductor, Electron, Electron-Microscopy, GAAS, GAAS MOSFETS, HEMT, Intermediate Band, Losses, MOSFET, MOSFETS, Semiconductor, Semiconductors, Solar Cell, Spectroscopy, Technology, Transmission
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Thayne, Professor Iain and Stanley, Professor Colin and Holland, Dr Martin
Authors: Holland, M., Stanley, C., Reid, W., Thayne, I., Paterson, G., and Long, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Publisher:IOP/EPSRC

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