Holland, M., Stanley, C., Reid, W., Thayne, I., Paterson, G. and Long, A. (2006) Ga2O3 grown on GaAs by MBE for GAAs MOSFETs. In: UK III-V Compound Semiconductors 2006, Sheffield, UK,
Full text not currently available from Enlighten.
| Item Type: | Conference Proceedings |
|---|---|
| Keywords: | Cells, Compound Semiconductor, Electron, Electron-Microscopy, GAAS, GAAS MOSFETS, HEMT, Intermediate Band, Losses, MOSFET, MOSFETS, Semiconductor, Semiconductors, Solar Cell, Spectroscopy, Technology, Transmission |
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Thayne, Prof Iain and Stanley, Professor Colin and Holland, Dr Martin |
| Authors: | Holland, M., Stanley, C., Reid, W., Thayne, I., Paterson, G., and Long, A. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Publisher: | IOP/EPSRC |
University Staff: Request a correction | Enlighten Editors: Update this record
Deposit and Record Details
Deposit and Record Details