Cheng, B., Roy, S. and Asenov, A. (2006) Low power, high density CMOS 6-T SRAM cell design subject to 'atomistic' fluctuations. In: 7th European Workshop on ULtimate Integration of Silicon, ULIS 2006, Grenoble, France, pp. 33-36.
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| Item Type: | Conference Proceedings |
|---|---|
| Keywords: | 6T SRAM, Atomistic, CMOS, Density, Design, Fluctuation, Fluctuations, Integration, Intrinsic Parameter Fluctuations, MOSFET, MOSFETS, Silicon, SRAM, Utb Soi |
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Asenov, Professor Asen and Cheng, Dr Binjie and Roy, Professor Scott |
| Authors: | Cheng, B., Roy, S., and Asenov, A. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
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