Low power, high density CMOS 6-T SRAM cell design subject to 'atomistic' fluctuations

Cheng, B., Roy, S. and Asenov, A. (2006) Low power, high density CMOS 6-T SRAM cell design subject to 'atomistic' fluctuations. In: 7th European Workshop on ULtimate Integration of Silicon, ULIS 2006, Grenoble, France, pp. 33-36.

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Item Type:Conference Proceedings
Keywords:6T SRAM, Atomistic, CMOS, Density, Design, Fluctuation, Fluctuations, Integration, Intrinsic Parameter Fluctuations, MOSFET, MOSFETS, Silicon, SRAM, Utb Soi
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Cheng, Dr Binjie and Roy, Professor Scott and Asenov, Professor Asen
Authors: Cheng, B., Roy, S., and Asenov, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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