Design consideration of 6-T SRAM towards the End Of Bulk CMOS Technology scaling subjected to randon dopant fluctuations

Cheng, B., Roy, S., Roy, G., Brown, A. and Asenov, A. (2006) Design consideration of 6-T SRAM towards the End Of Bulk CMOS Technology scaling subjected to randon dopant fluctuations. In: 34th European Solid State Devices Research Conference, Montreux, Switzerland, pp. 258-261.

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Item Type:Conference Proceedings
Keywords:6T SRAM, CMOS, CMOS Technology, Design, Device, Devices, Fluctuation, Fluctuations, Scaling, SRAM, Technology
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Roy, Dr Gareth and Brown, Mr Andrew and Cheng, Dr Binjie and Roy, Professor Scott and Asenov, Professor Asen
Authors: Cheng, B., Roy, S., Roy, G., Brown, A., and Asenov, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Publisher:IEEE

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