Monte Carlo simulation of implant free InGaAs MOSFET

Kalna, K., Asenov, A. and Passlack, M. (2006) Monte Carlo simulation of implant free InGaAs MOSFET. In: Seventh International Conference on New Phenomena in Mesoscopic Structures and the Fifth International Conference on Surfaces and Interfaces of Mesoscopic Devices, Maui, Hawaii, 27 November - 2 December 2005, pp. 200-203. (doi: 10.1088/1742-6596/38/1/048)

Abstract

The performance potential of n-type implant free In0.25Ga0.75As MOSFETs with high-κ dielectric is investigated using ensemble Monte Carlo device simulations. The implant free MOSFET concept takes advantage of the high mobility in III-V materials to allow operation at very high speed and low power. A 100 nm gate length implant free In0.25Ga0.75As MOSFET with a layer structure derived from heterojunction transistors may deliver a drive current of 1800 A/m and transconductance up to 1342 mS/mm. This implant free transistor is then scaled in the both lateral and vertical dimensions to gate lengths of 70 and 50 nm. The scaled devices exhibit continuous improvement in the drive current up to 2600 A/m and 3259 A/m and transconductance of 2076 mS/mm and 3192 mS/mm, respectively. This demonstrates the excellent scaling potential of the implant free MOSFET concept.

• Item Type: Conference Proceedings
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Asenov, Professor Asen and Kalna, Dr Karol
• Authors: Kalna, K., Asenov, A., and Passlack, M.
• Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Research Group: Device Modelling Group
• Publisher: Institute of Physics
• ISSN: 1742-6588
• Copyright Holders: Copyright © 2006 Institute of Physics
• First Published: First published in Journal of Physics 38:200-203
• Publisher Policy: Reproduced in accordance with the copyright policy of the publisher