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Efficient hole transport model in warped bands for use in the simulation of Si/SiGe MOSFETs

Watling, J.R., Asenov, A., and Barker, J.R. (1998) Efficient hole transport model in warped bands for use in the simulation of Si/SiGe MOSFETs. In: International Workshop on Computational Electronics, 19-21 October 1998, Osaka, Japan.

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Publisher's URL: http://dx.doi.org/10.1109/IWCE.1998.742719

Abstract

An analytical geometric model for the valence band in strained and relaxed Si1-xGex is presented, which shows good agreement with a 6-band k·p analysis of the valence band. The geometric model allows us to define an effective mass tensor for the warped valence band structure. The model also has applications in the study of III-V semiconductors, and could aid in the interpretation of cyclotron resonance experiments in these bands. A warped three-band Monte Carlo simulation has been developed based on this model making use of the efficient calculation of trajectory dynamics that is made possible through the use of such a model. The calculated transport characteristics show good agreement with the available experimental data.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Watling, Dr Jeremy and Asenov, Prof Asen
Authors: Watling, J.R., Asenov, A., and Barker, J.R.
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Research Group:Device Modelling Group
Publisher:Institute of Electrical and Electronics Engineers
Copyright Holders:Copyright © 1998 Institute of Electrical and Electronics Engineers
First Published:First published in Extended abstracts of 1998 Sixth International Workshop on Computational Electronics (1998):96-99
Publisher Policy:Reproduced in accordance with the copyright policy of the publisher

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