Random dopant threshold voltage fluctuations in 50 nm epitaxial channel MOSFETs: a 3D 'atomistic' simulation study

Asenov, A. (1998) Random dopant threshold voltage fluctuations in 50 nm epitaxial channel MOSFETs: a 3D 'atomistic' simulation study. In: ESSDERC '98 : 28rd Conference on European Solid-State Devices, Bordeaux, France, 8-10 September 1998, pp. 300-303. ISBN 2863322346

Abstract

No abstract available.

• Item Type: Conference Proceedings
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Asenov, Professor Asen
• Authors: Asenov, A.
• Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Research Group: Device Modelling Group
• Publisher: Institute of Electrical and Electronics Engineers
• ISBN: 2863322346
• Copyright Holders: Copyright © 1998 Institute of Electrical and Electronics Engineers
• First Published: First published in ESSDERC '98 : proceedings of the 28th European Solid-State Devices (1998):300-303
• Publisher Policy: Reproduced in accordance with the copyright policy of the publisher