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Random dopant threshold voltage fluctuations in 50 nm epitaxial channel MOSFETs: a 3D 'atomistic' simulation study

Asenov, A. (1998) Random dopant threshold voltage fluctuations in 50 nm epitaxial channel MOSFETs: a 3D 'atomistic' simulation study. In: ESSDERC '98 : 28rd Conference on European Solid-State Devices, 8-10 September 1998, Bordeaux, France.

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Publisher's URL: http://ieeexplore.ieee.org/xpl/RecentCon.jsp?punumber=10058

Abstract

No abstract available.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Asenov, Prof Asen
Authors: Asenov, A.
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Research Group:Device Modelling Group
Publisher:Institute of Electrical and Electronics Engineers
Copyright Holders:Copyright © 1998 Institute of Electrical and Electronics Engineers
First Published:First published in ESSDERC '98 : proceedings of the 28th European Solid-State Devices (1998):300-303
Publisher Policy:Reproduced in accordance with the copyright policy of the publisher

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