Borsosfoldi, Z., Webster, D.R., Thayne, I.G., Asenov, A., Haigh, D.G., and Beaumont, S.P. (1997) Ultra-linear pseudomorphic HEMTs for wireless communications: A simulation study. In: IEEE International Symposium on Compound Semiconductors, 8-11 September 1997, San Diego, California.
Publisher's URL: http://dx.doi.org/10.1109/ISCS.1998.711718
In this paper, we apply numerical device simulation in the design of pseudomorphic HEMTs with improved linearity and reduced intermodulation products aimed at wireless communications applications. We show that in channel doped GaAs pHEMTs the introduction of a p-doped buffer layer significantly improves the device linearity leading to a 10 dB suppression of 3rd order distortion over a wide bias range with similar gain when compared with a more standard δ-doped GaAs pHEMT device.
|Item Type:||Conference Proceedings|
|Glasgow Author(s) Enlighten ID:||Thayne, Professor Iain and Beaumont, Professor Steven and Asenov, Professor Asen|
|Authors:||Borsosfoldi, Z., Webster, D.R., Thayne, I.G., Asenov, A., Haigh, D.G., and Beaumont, S.P.|
|Subjects:||T Technology > TK Electrical engineering. Electronics Nuclear engineering|
|College/School:||College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering|
|Research Group:||Device Modelling Group|
|Publisher:||Institute of Electrical and Electronics Engineers|
|Copyright Holders:||Copyright © 1997 Institute of Electrical and Electronics Engineers|
|First Published:||First published in Compound semiconductors 1997 : proceedings of the IEEE Twenty-fourth International Symposium on Compound Semiconductors (1997):475-478|
|Publisher Policy:||Reproduced in accordance with the copyright policy of the publisher|