Enlighten
Research publications by members of the University of Glasgow
home > services > Enlighten

Strain engineered InxGa1-xAs channel pHEMTs on virtual substrates: a simulation study

Babiker, S., Asenov, A., Roy, S., Barker, J.R., and Beaumont, S.P. (1998) Strain engineered InxGa1-xAs channel pHEMTs on virtual substrates: a simulation study. In: International Workshop on Computational Electronics, 19-21 October 1998, Osaka, Japan.

[img]
Preview
Text
strain2_engineered.pdf

455Kb

Publisher's URL: http://dx.doi.org/10.1109/IWCE.1998.742741

Abstract

The impact of InxAl1-xAs strain control buffers on the performance of low In content InGaAs channel pseudomorphic high electron mobility transistor p(HEMT) is investigated. It is shown that relaxed and tensile strained channel devices outperform the conventional compressively strained channel devices. It is argued that strain engineering in GaAs based devices makes it possible to realise RF characteristics comparable to InP based pHEMTs while obtaining improved breakdown characteristics.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Beaumont, Prof Steven and Asenov, Prof Asen
Authors: Babiker, S., Asenov, A., Roy, S., Barker, J.R., and Beaumont, S.P.
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Research Group:Device Modelling Group
Publisher:Institute of Electrical and Electronics Engineers
Copyright Holders:Copyright © 1998 Institute of Electrical and Electronics Engineers
First Published:First published in Extended abstracts of 1998 Sixth International Workshop on Computational Electronics (1998):178-181
Publisher Policy:Reproduced in accordance with the copyright policy of the publisher

University Staff: Request a correction | Enlighten Editors: Update this record

Downloads per month over past year

View more statistics