Strain engineered In_xGa_1-xAs channel pHEMTs on virtual substrates: a simulation study

Babiker, S., Asenov, A., Roy, S., Barker, J.R. and Beaumont, S.P. (1998) Strain engineered In_xGa_1-xAs channel pHEMTs on virtual substrates: a simulation study. In: International Workshop on Computational Electronics, Osaka, Japan, 19-21 October 1998, pp. 178-181. ISBN 0780343697 (doi: 10.1109/IWCE.1998.742741)

Abstract

The impact of In_xAl_1-xAs strain control buffers on the performance of low In content InGaAs channel pseudomorphic high electron mobility transistor p(HEMT) is investigated. It is shown that relaxed and tensile strained channel devices outperform the conventional compressively strained channel devices. It is argued that strain engineering in GaAs based devices makes it possible to realise RF characteristics comparable to InP based pHEMTs while obtaining improved breakdown characteristics.

• Item Type: Conference Proceedings
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Beaumont, Professor Steve and Asenov, Professor Asen
• Authors: Babiker, S., Asenov, A., Roy, S., Barker, J.R., and Beaumont, S.P.
• Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Research Group: Device Modelling Group
• Publisher: Institute of Electrical and Electronics Engineers
• ISBN: 0780343697
• Copyright Holders: Copyright © 1998 Institute of Electrical and Electronics Engineers
• First Published: First published in Extended abstracts of 1998 Sixth International Workshop on Computational Electronics (1998):178-181
• Publisher Policy: Reproduced in accordance with the copyright policy of the publisher