Roy, S., Kaya, S., Babiker, S., Asenov, A., and Barker, J.R. (1998) Monte Carlo investigation of optimal device architectures for SiGe FETs. In: International Workshop on Computational Electronics, 19-21 October 1998, Osaka, Japan.
Publisher's URL: http://dx.doi.org/10.1109/IWCE.1998.742749
Strained silicon channel FETs grown on virtual SiGe substrates show clear potential for RF applications, in a material system compatible with silicon VLSI. However, the optimisation of practical RF devices requires some care. 0.1-0.12 μm gate length designs are investigated using Monte Carlo techniques. Although structures based on III-V experience show fT values of up to 94 GHz, more realistic designs are shown to be limited by parallel conduction and ill constrained effective channel lengths. Aggressively scaled SiGe devices, following state-of-the-art CMOS technologies, show fT values of up to 80 GHz.
|Item Type:||Conference Proceedings|
|Glasgow Author(s) Enlighten ID:||Roy, Professor Scott and Asenov, Professor Asen|
|Authors:||Roy, S., Kaya, S., Babiker, S., Asenov, A., and Barker, J.R.|
|Subjects:||T Technology > TK Electrical engineering. Electronics Nuclear engineering|
|College/School:||College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering|
|Research Group:||Device Modelling Group|
|Publisher:||Institute of Electrical and Electronics Engineers|
|Copyright Holders:||Copyright © 1998 Institute of Electrical and Electronics Engineers|
|First Published:||First published in Extended abstracts of 1998 Sixth International Workshop on Computational Electronics (1998):210-213|
|Publisher Policy:||Reproduced in accordance with the copyright policy of the publisher|