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Efficient 3D `atomistic' simulation technique for studying of random dopant induced threshold voltage lowering and fluctuations in decanano MOSFETs

Asenov, A. (1998) Efficient 3D `atomistic' simulation technique for studying of random dopant induced threshold voltage lowering and fluctuations in decanano MOSFETs. In: International Workshop on Computational Electronics, 19-21 October 1998, Osaka, Japan.

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Publisher's URL: http://dx.doi.org/10.1109/IWCE.1998.742761

Abstract

A 3D `atomistic' simulation technique to study random dopant induced threshold voltage lowering and fluctuations in sub 0.1 μm MOSFETs is presented. It allows statistical analysis of random impurity effects down to the individual impurity level. Efficient algorithms based on a single solution of Poisson's equation, followed by the solution of a simplified current continuity equation are used in the simulations.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s):Asenov, Prof Asen
Authors: Asenov, A.
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Research Group:Device Modelling Group
Publisher:Institute of Electrical and Electronics Engineers
Copyright Holders:Copyright © 1998 Institute of Electrical and Electronics Engineers
First Published:First published in Extended abstracts of 1998 Sixth International Workshop on Computational Electronics
Publisher Policy:Reproduced in accordance with the copyright policy of the publisher

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