Asenov, A. (1998) Efficient 3D `atomistic' simulation technique for studying of random dopant induced threshold voltage lowering and fluctuations in decanano MOSFETs. In: International Workshop on Computational Electronics, 19-21 October 1998, Osaka, Japan.
Publisher's URL: http://dx.doi.org/10.1109/IWCE.1998.742761
A 3D `atomistic' simulation technique to study random dopant induced threshold voltage lowering and fluctuations in sub 0.1 μm MOSFETs is presented. It allows statistical analysis of random impurity effects down to the individual impurity level. Efficient algorithms based on a single solution of Poisson's equation, followed by the solution of a simplified current continuity equation are used in the simulations.
|Item Type:||Conference Proceedings|
|Glasgow Author(s):||Asenov, Prof Asen|
|Subjects:||T Technology > TK Electrical engineering. Electronics Nuclear engineering|
|College/School:||College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering|
|Research Group:||Device Modelling Group|
|Publisher:||Institute of Electrical and Electronics Engineers|
|Copyright Holders:||Copyright © 1998 Institute of Electrical and Electronics Engineers|
|First Published:||First published in Extended abstracts of 1998 Sixth International Workshop on Computational Electronics|
|Publisher Policy:||Reproduced in accordance with the copyright policy of the publisher|