Roy, S., Kaya, S., Asenov, A., and Barker, J.R. (1999) RF analysis methodology for Si and SiGe FETs based on transient Monte Carlo simulation. In: International Conference on Simulation of Semiconductor Processes and Devices., 6-8 September 1999, Kyoto, Japan.
Publisher's URL: http://dx.doi.org/10.1109/SISPAD.1999.799282
A comprehensive analysis methodology allowing investigation of the RF performance of Si and strained Si:SiGe MOSFETs is presented. It is based on transient ensemble Monte Carlo simulation which correctly describes device transport, and employs a finite element solver to account for complex device geometries. Transfer characteristics and figures of merit for a number of existing and proposed RF MOSFETs are discussed.
|Item Type:||Conference Proceedings|
|Glasgow Author(s) Enlighten ID:||Roy, Professor Scott and Asenov, Professor Asen|
|Authors:||Roy, S., Kaya, S., Asenov, A., and Barker, J.R.|
|Subjects:||T Technology > TK Electrical engineering. Electronics Nuclear engineering|
|College/School:||College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering|
|Research Group:||Device Modelling Group|
|Publisher:||Institute of Electrical and Electronics Engineers|
|Copyright Holders:||Copyright © 1999 Institute of Electrical and Electronics Engineers|
|First Published:||First published in International Conference on Simulation of Semiconductor Processes and Devices (1999):147-150|
|Publisher Policy:||Reproduced in accordance with the copyright policy of the publisher|