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RF analysis methodology for Si and SiGe FETs based on transient Monte Carlo simulation

Roy, S., Kaya, S., Asenov, A., and Barker, J.R. (1999) RF analysis methodology for Si and SiGe FETs based on transient Monte Carlo simulation. In: International Conference on Simulation of Semiconductor Processes and Devices., 6-8 September 1999, Kyoto, Japan.

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Publisher's URL: http://dx.doi.org/10.1109/SISPAD.1999.799282

Abstract

A comprehensive analysis methodology allowing investigation of the RF performance of Si and strained Si:SiGe MOSFETs is presented. It is based on transient ensemble Monte Carlo simulation which correctly describes device transport, and employs a finite element solver to account for complex device geometries. Transfer characteristics and figures of merit for a number of existing and proposed RF MOSFETs are discussed.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Roy, Prof Scott and Asenov, Prof Asen
Authors: Roy, S., Kaya, S., Asenov, A., and Barker, J.R.
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Research Group:Device Modelling Group
Publisher:Institute of Electrical and Electronics Engineers
Copyright Holders:Copyright © 1999 Institute of Electrical and Electronics Engineers
First Published:First published in International Conference on Simulation of Semiconductor Processes and Devices (1999):147-150
Publisher Policy:Reproduced in accordance with the copyright policy of the publisher

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