Asenov, A. (2000) Quantum corrections to the `atomistic' MOSFET simulation. In: 7th International Workshop on Computational Electronics, 22-25 May 2000, Glasgow, UK.
Publisher's URL: http://dx.doi.org/10.1109/IWCE.2000.869895
In this paper we study the influence of the quantum effects in the inversion layer on the parameter fluctuation in decanano MOSFETs. The quantum mechanical effects are incorporated in our previously published 3D 'atomistic' simulation approach using a full 3D implementation of the density gradient formalism. This results in a consistent, fully 3D, quantum mechanical picture which incorporates the vertical inversion layer quantization, lateral confinement effects associated with the current filamentation in the valleys of the potential fluctuation, and tunnelling through the sharp potential barriers associated with individual dopants.
|Item Type:||Conference Proceedings|
|Keywords:||MOSFET, quantum, simulation|
|Glasgow Author(s):||Asenov, Prof Asen|
|Subjects:||T Technology > TK Electrical engineering. Electronics Nuclear engineering|
|College/School:||College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering|
|Research Group:||Device Modelling Group|
|Publisher:||Institute of Electrical and Electronics Engineers|
|Copyright Holders:||Copyright © 2000 Institute of Electrical and Electronics Engineers|
|First Published:||First published in 7th International Workshop on Computational Electronics (2000):66-67|
|Publisher Policy:||Reproduced in accordance with the copyright policy of the publisher|