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Watling, J.R., Zhao, Y.P., Asenov, A., and Barker, J.R. (2000) Nonequilibrium hole transport in deep sub-micron well-tempered Si p-MOSFETs. In: 7th International Workshop on Computational Electronics, 22-25 May 2000, Glasgow, UK.
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non_equ2_hole.pdf 182Kb |
Publisher's URL: http://dx.doi.org/10.1109/IWCE.2000.869925
Abstract
Using 2D full-band MC simulations the authors study nonequilibrium transport effects and the performance potential of well tempered Si p-channel MOSFETs covering gate lengths ranging from 90nm to 25nm. By comparing MC simulations with carefully calibrated drift diffusion (DD) simulations of the same devices, they provide a quantitative estimate of the importance and the influence of nonequilibrium transport on the device performance.
| Item Type: | Conference Proceedings |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s): | Watling, Dr Jeremy and Asenov, Prof Asen |
| Authors: | Watling, J.R., Zhao, Y.P., Asenov, A., and Barker, J.R. |
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Research Group: | Device Modelling Group |
| Publisher: | Institute of Electrical and Electronics Engineers |
| Copyright Holders: | Copyright © 2000 Institute of Electrical and Electronics Engineers |
| First Published: | First published in 7th International Workshop on Computational Electronics (2000):66-67 |
| Publisher Policy: | Reproduced in accordance with the copyright policy of the publisher |
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