Watling, J.R., Zhao, Y.P., Asenov, A., and Barker, J.R. (2000) Nonequilibrium hole transport in deep sub-micron well-tempered Si p-MOSFETs. In: 7th International Workshop on Computational Electronics, 22-25 May 2000, Glasgow, UK.
Publisher's URL: http://dx.doi.org/10.1109/IWCE.2000.869925
Using 2D full-band MC simulations the authors study nonequilibrium transport effects and the performance potential of well tempered Si p-channel MOSFETs covering gate lengths ranging from 90nm to 25nm. By comparing MC simulations with carefully calibrated drift diffusion (DD) simulations of the same devices, they provide a quantitative estimate of the importance and the influence of nonequilibrium transport on the device performance.
|Item Type:||Conference Proceedings|
|Glasgow Author(s) Enlighten ID:||Watling, Dr Jeremy and Asenov, Professor Asen|
|Authors:||Watling, J.R., Zhao, Y.P., Asenov, A., and Barker, J.R.|
|Subjects:||T Technology > TK Electrical engineering. Electronics Nuclear engineering|
|College/School:||College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering|
|Research Group:||Device Modelling Group|
|Publisher:||Institute of Electrical and Electronics Engineers|
|Copyright Holders:||Copyright © 2000 Institute of Electrical and Electronics Engineers|
|First Published:||First published in 7th International Workshop on Computational Electronics (2000):66-67|
|Publisher Policy:||Reproduced in accordance with the copyright policy of the publisher|